Cite
HARVARD Citation
Yoon, H. et al. (2017). Faceted growth of ()‐oriented GaN domains on an SiO2‐patterned m‐plane sapphire substrate using polarity inversion. Journal of applied crystallography. 50 (1), pp. 30-35. [Online].
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Yoon, H. et al. (2017). Faceted growth of ()‐oriented GaN domains on an SiO2‐patterned m‐plane sapphire substrate using polarity inversion. Journal of applied crystallography. 50 (1), pp. 30-35. [Online].