Faceted growth of ()‐oriented GaN domains on an SiO2‐patterned m‐plane sapphire substrate using polarity inversion. Issue 1 (12th December 2016)

• Record Type: Journal Article
• Authors: Yoon, Hansub; Jue, Miyeon; Jang, Dongsoo; Kim, Chinkyo
• Is Part Of: Journal of applied crystallography. Volume 50:Issue 1(2017)
• Page Start: 30
• Page End: 35
• Publication Date: 2016-12-12
• Subjects: GaN -- semipolar -- polarity inversion -- hydride vapour‐phase epitaxy -- electron microscopy; Crystallography -- Periodicals; 548.05
• DOI: 10.1107/S1600576716015077
• Languages: English
• ISSNs: 0021-8898

Abstract

Abstract : Energetically less favourable [ ]‐oriented GaN faceted domains on an SiO2 ‐patterned m ‐plane sapphire substrate are grown for the first time utilizing spontaneous polarity inversion. Abstract : Heteroepitaxial growth of ( )‐oriented GaN domains on m ‐plane sapphire is energetically unfavourable in comparison with that of ( )‐oriented GaN domains, but the faceted domains with ( )‐oriented GaN reveal a more m ‐facet‐dominant configuration than ( )‐oriented GaN in such a way that the quantum‐confined Stark effect can be more effectively suppressed. It is reported here, for the first time, that semipolar ( )‐oriented and faceted GaN domains can be grown on an SiO2 ‐patterned m ‐plane sapphire substrate by employing polarity inversion of initially nucleated ( )‐oriented GaN domains. This polarity inversion of semipolar GaN was found to occur when the domains were grown with a 20–37.5 times higher V/III ratio and 70 K lower growth temperature than corresponding parameters for polarity‐not‐inverted domains. This work opens up a new possibility of effective suppression of the quantum‐confined Stark effect by polarity‐controlled semipolar GaN in an inexpensive manner in comparison with homoepitaxial growth of ( )‐oriented GaN on a GaN substrate.