Tungsten doped stannic oxide transparent conductive thin film using preoxotungstic acid dopant. (June 2019)

• Record Type: Journal Article
• Authors: Zhang, Guanguang; Zhang, Xu; Ning, Honglong; Chen, Huangxing; Wu, Qiong; Jiang, Man; Li, Conghao; Guo, Dong; Wang, Yiping; Yao, Rihui; Peng, Junbiao
• Is Part Of: Superlattices and microstructures. Volume 130(2019)
• Page Start: 277
• Page End: 284
• Publication Date: 2019-06
• Subjects: Doped stannic oxide films -- Tungstic acid dopant -- Surface morphology -- Crystallinity -- Electrical properties -- Optical properties; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2019.04.039
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: Tungsten doped stannic oxide transparent conductive thin films (W-doped SnO2 ) have been prepared via a solution process. We use stannous chloride, preoxotungstic acid (PTA), hydrogen peroxide and anhydrous ethanol to prepare precursor solution which is stable and colorless. By investigating the effects of tungsten doping ratio and annealing temperature on properties of tungsten doped stannic oxide films, it is found that the amounts of pores on surface can be reduced by increasing annealing temperature. Amorphous SnO2 begins to transform into crystalline SnO2 when annealed at 300 °C. The resistivity of 2 at.% W-doped SnO2 achieves 2.94 × 10 −2 Ω cm annealed in air at 500 °C. The transmittance of W-doped SnO2 films (around 87%) is better than that of pure SnO2 films (around 83%) in visible range contrasted with blank quartz glass. The optical band gaps of both doped and pure SnO2 films are over 3.7 eV. Highlights: The preoxotungstic acid is used as the dopant for preparing W-doped SnO2 film. Adding H2 O2 to achieve uniform dissolution of preoxotungstic acid in precursor. Introducing W 6+ into SnO2 lattice enhances the transmittance and conductivity. The transmittance of W-doped SnO2 films is around 87%. The most efficient doping ratio is 2 at.%.