Study on SrTiO3 film for the application of power devices. (June 2019)

• Record Type: Journal Article
• Authors: Lin, Jingjie; Cheng, Junji; Li, Ping; Chen, Weizhen; Huang, Haimeng
• Is Part Of: Superlattices and microstructures. Volume 130(2019)
• Page Start: 168
• Page End: 174
• Publication Date: 2019-06
• Subjects: High-k (HK) -- SrTiO3 (STO) -- Power device -- Breakdown voltage (BV) -- Dose deviation; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2019.04.033
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: In this study, SrTiO3 (STO) film without cracks is directly deposited on the surface of silicon. Some key characteristics of the film are measured. By taking the measurement results into the simulation, it is verified that the STO film is able to improve the surface electric field distribution of the lateral power devices. Meanwhile, the film can expand the process window to resist dose deviation by more than twice, which promises enhanced product yield. This study provides a reference for the material selection of High- k (HK) insulators, which have been used to develop the power semiconductor devices. Highlights: SrTiO3 in paraelectric phase is suggested as the High- k insulator in semiconductor power devices. SrTiO3 film without cracks is directly deposited on the surface of Silicon without buffer layers for power devices. The process window to resist dose deviation in power devices could be remarkably expanded by using SrTiO3 .