Cite
APA Citation
Li, S., Zhang, C., Liu, S., Wei, J., Zhang, L., Sun, W., Zhu, Y., Zhang, T., Wang, D., & Sun, Y. (2019). reliability concern of quasi-vertical GaN Schottky barrier diode under high temperature reverse bias stress. Superlattices and microstructures, 130, 233–240. http://access.bl.uk/ark:/81055/vdc_100162429131.0x000030