Cite
HARVARD Citation
Li, S. et al. (2019). Reliability concern of quasi-vertical GaN Schottky barrier diode under high temperature reverse bias stress. Superlattices and microstructures. pp. 233-240. [Online].
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Li, S. et al. (2019). Reliability concern of quasi-vertical GaN Schottky barrier diode under high temperature reverse bias stress. Superlattices and microstructures. pp. 233-240. [Online].