Adsorption mechanism of hydrogen sulfide and sulfur dioxide on Au–MoS2 monolayer. (November 2019)
- Record Type:
- Journal Article
- Title:
- Adsorption mechanism of hydrogen sulfide and sulfur dioxide on Au–MoS2 monolayer. (November 2019)
- Main Title:
- Adsorption mechanism of hydrogen sulfide and sulfur dioxide on Au–MoS2 monolayer
- Authors:
- Gui, Yingang
Chen, Jun
Wang, Weibo
Zhu, Yan
Tang, Chao
Xu, Lingna - Abstract:
- Abstract: Based on density functional theory (DFT) theoretical calculations, Au–MoS2 monolayer was used as the adsorbent to remove the typical decomposition components (H2 S and SO2 ) generating in SF6 -insulated equipment. The adsorption structure, adsorption energy, charge transfer, HOMO, LUMO, and the density of states (DOS) of single and double H2 S and SO2 molecules adsorption on Au–MoS2 monolayer were analyzed. It is found that Au atom acts as the active site for gas adsorption, and the gas molecules tend to adsorb on Au–MoS2 monolayer surface at Au doping site by building a chemical bond with Au atom. H2 S adsorption makes the conductivity of the adsorption system increase. On the contrary, SO2 adsorption leads to the decrease of adsorption system. Due to the strong repulsive force between gas molecules, Au–MoS2 monolayer only shows strong interaction to one of the gas molecule during the double gas molecules adsorption process. The adsorption energy of single and double H2 S adsorption are −0.96 eV, −1.35 eV, and single and double SO2 adsorption are −1.18 eV and −1.44 eV. In conclusion, Au–MoS2 monolayer shows optimal adsorption ability to H2 S and SO2, which makes it potential adsorbent material using in SF6 -insulated equipment. Highlights: It is the first time that Au–MoS2 is used as the adsorbent to remove the decomposition components of SF6 . Au–MoS2 shows good adsorption properties to H2 S and SO2 by physical absorption and chemisorption. The theoreticalAbstract: Based on density functional theory (DFT) theoretical calculations, Au–MoS2 monolayer was used as the adsorbent to remove the typical decomposition components (H2 S and SO2 ) generating in SF6 -insulated equipment. The adsorption structure, adsorption energy, charge transfer, HOMO, LUMO, and the density of states (DOS) of single and double H2 S and SO2 molecules adsorption on Au–MoS2 monolayer were analyzed. It is found that Au atom acts as the active site for gas adsorption, and the gas molecules tend to adsorb on Au–MoS2 monolayer surface at Au doping site by building a chemical bond with Au atom. H2 S adsorption makes the conductivity of the adsorption system increase. On the contrary, SO2 adsorption leads to the decrease of adsorption system. Due to the strong repulsive force between gas molecules, Au–MoS2 monolayer only shows strong interaction to one of the gas molecule during the double gas molecules adsorption process. The adsorption energy of single and double H2 S adsorption are −0.96 eV, −1.35 eV, and single and double SO2 adsorption are −1.18 eV and −1.44 eV. In conclusion, Au–MoS2 monolayer shows optimal adsorption ability to H2 S and SO2, which makes it potential adsorbent material using in SF6 -insulated equipment. Highlights: It is the first time that Au–MoS2 is used as the adsorbent to remove the decomposition components of SF6 . Au–MoS2 shows good adsorption properties to H2 S and SO2 by physical absorption and chemisorption. The theoretical calculation results are important to guide the experiments on preparing Au–MoS2 based adsorbent. … (more)
- Is Part Of:
- Superlattices and microstructures. Volume 135(2019)
- Journal:
- Superlattices and microstructures
- Issue:
- Volume 135(2019)
- Issue Display:
- Volume 135, Issue 2019 (2019)
- Year:
- 2019
- Volume:
- 135
- Issue:
- 2019
- Issue Sort Value:
- 2019-0135-2019-0000
- Page Start:
- Page End:
- Publication Date:
- 2019-11
- Subjects:
- SF6 decompositions -- Au–MoS2 monolayer -- Adsorption
Superlattices as materials -- Periodicals
Microstructure -- Periodicals
Semiconductors -- Periodicals
Superréseaux -- Périodiques
Microstructure (Physique) -- Périodiques
Semiconducteurs -- Périodiques
621.38152 - Journal URLs:
- http://www.sciencedirect.com/science/journal/07496036 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.spmi.2019.106280 ↗
- Languages:
- English
- ISSNs:
- 0749-6036
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 8547.076700
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 23554.xml