A low loss single-channel SiC trench MOSFET with integrated trench MOS barrier Schottky diode. (2nd June 2021)

• Record Type: Journal Article
• Authors: Yi, Bo; Wu, Zheng; Zhang, Qian; Cheng, JunJi; Huang, HaiMeng; Pan, YiLan; Zhang, XiaoKun; Xiang, Yong
• Is Part Of: Semiconductor science and technology. Volume 36:Number 7(2021)
• Publication Date: 2021-06-02
• Subjects: SiC MOSFET -- integrated Schottky barrier diode -- reverse recovery charge -- switching loss; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/ac01a1
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: A single-channel SiC trench MOSFET (SC-TMOS) with integrated trench MOS barrier Schottky diode (TMBS) is proposed and investigated in this paper. The electric field at the Schottky interface is reduced to 0.37 MV cm −1 by the trench MOS and P + shield under the gate, which completely suppresses the leakage current through the TMBS. The on-state voltage drop ( V R_ON ) of the SC-TMOS in reverse conduction state is reduced to 1.59 V (@ J SD = 400 A cm −2 ) compared to 2.93 V of the PN body diode of a conventional trench MOSFET (C-TMOS) and 1.61 V of a three-level protection trench MOSFET (TP-TMOS). Meanwhile, higher BFOM (Baliga's figure of merit: BV 2 / R on, sp ) is obtained, which is 11.8% and 40% improved compared with those of the C-TMOS and TP-TMOS, respectively. Besides, the reverse recovery charge of the SC-TMOS is reduced by 41.7% and 66.4% compared with those of the C-TMOS with or without external junction barrier Schottky diode (JBS), and is comparable with that of the TP-TMOS. Moreover, with optimized design, C GS and C GD decrease dramatically. As a result, the total inductive switching loss of the proposed SC-TMOS is reduced by 19.5%, 43.2% and 28.8% compared with those of the C-TMOS with or without external JBS and TP-TMOS, respectively.