DFT simulation of interfacial interaction of graphene/SiO2 composites. (1st November 2022)
- Record Type:
- Journal Article
- Title:
- DFT simulation of interfacial interaction of graphene/SiO2 composites. (1st November 2022)
- Main Title:
- DFT simulation of interfacial interaction of graphene/SiO2 composites
- Authors:
- Li, Changhua
Yang, Xiaoning
Guo, Yannan - Abstract:
- Abstract: Thoroughly understanding the graphene/SiO2 interfacial properties is of great significance for improving the performance of graphene-based nanoelectronic devices. In this work, the first-principle density functional theory (DFT) method was applied to systematically investigate the interfacial interaction and electronic properties of graphene on the β -cristobalite SiO2 surface. It was first demonstrated that the Si-terminated β -cristobalite SiO2 substrate has a strong chemical covalent interaction with the pristine graphene, whereas the hydroxylated SiO2 surface just shows weak vdW interaction with graphene. The interlayer water molecules between graphene and SiO2 can reduce the adhesion energy for the graphene/SiO2 composites, in which the water layers provide the main contribution to the graphene adhesion with the water-coated SiO2 . The effects of the SiO2 surface polarity and the interfacial water geometry on the electronic properties of graphene were investigated. The electron transfer between hydroxylated SiO2 and graphene is highly related to the surface silanol density. Meanwhile, the interlayer water molecules could induce a minor electron transfer from graphene to the surfaces, resulting in the hole-doping of graphene. Our simulation provides a new understanding of the interaction for graphene/SiO2 interfaces. Graphical abstract: Image 1 Highlights: The interfacial interaction and electronic properties of graphene on β -cristobalite SiO2 wereAbstract: Thoroughly understanding the graphene/SiO2 interfacial properties is of great significance for improving the performance of graphene-based nanoelectronic devices. In this work, the first-principle density functional theory (DFT) method was applied to systematically investigate the interfacial interaction and electronic properties of graphene on the β -cristobalite SiO2 surface. It was first demonstrated that the Si-terminated β -cristobalite SiO2 substrate has a strong chemical covalent interaction with the pristine graphene, whereas the hydroxylated SiO2 surface just shows weak vdW interaction with graphene. The interlayer water molecules between graphene and SiO2 can reduce the adhesion energy for the graphene/SiO2 composites, in which the water layers provide the main contribution to the graphene adhesion with the water-coated SiO2 . The effects of the SiO2 surface polarity and the interfacial water geometry on the electronic properties of graphene were investigated. The electron transfer between hydroxylated SiO2 and graphene is highly related to the surface silanol density. Meanwhile, the interlayer water molecules could induce a minor electron transfer from graphene to the surfaces, resulting in the hole-doping of graphene. Our simulation provides a new understanding of the interaction for graphene/SiO2 interfaces. Graphical abstract: Image 1 Highlights: The interfacial interaction and electronic properties of graphene on β -cristobalite SiO2 were investigated. The C-Si covalent interaction was found between graphene and the Si-terminated SiO2 surface. Effect of surface silanol was examined and interface electron transfer is related to the silanol densities. Interlayer water molecules could induce electron transfer and result in hole-doping of graphene. … (more)
- Is Part Of:
- Materials science in semiconductor processing. Volume 150(2022)
- Journal:
- Materials science in semiconductor processing
- Issue:
- Volume 150(2022)
- Issue Display:
- Volume 150, Issue 2022 (2022)
- Year:
- 2022
- Volume:
- 150
- Issue:
- 2022
- Issue Sort Value:
- 2022-0150-2022-0000
- Page Start:
- Page End:
- Publication Date:
- 2022-11-01
- Subjects:
- Graphene -- SiO2 surfaces -- Interfaces -- Silanol groups -- Density functional theory -- Hole/electron doping
Semiconductors -- Periodicals
Integrated circuits -- Materials -- Periodicals
Semiconducteurs -- Périodiques
Circuits intégrés -- Matériaux -- Périodiques
Electronic journals
621.38152 - Journal URLs:
- http://www.sciencedirect.com/science/journal/latest/13698001 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.mssp.2022.106964 ↗
- Languages:
- English
- ISSNs:
- 1369-8001
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5396.440600
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 23402.xml