Pressure induced variations in the optoelectronic response of ASnX3 (A=K, Rb; X=Cl, Br, I) perovskites: A first principles study. (1st November 2022)

• Record Type: Journal Article
• Authors: Ullah, Mohib; Neffati, R.; Murtaza, G.; Khan, Shamim; Haneef, Muhammad; Ashraf, Muhammad Waqar
• Is Part Of: Materials science in semiconductor processing. Volume 150(2022)
• Publication Date: 2022-11-01
• Subjects: Lead free perovskites -- Band structure -- Optical properties -- mBJ; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2022.106977
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Lead free perovskites are crucial for the environmental friendly solar cell materials. ASnX3 (A = Rb, K; X = Cl, Br, I) perovskites have been relatively less explored compared to other compounds of the same family. In this work, inorganic halide based perovskites ASnX3 (A = Rb, K; X = Cl, Br, I) have been studied at zero and higher pressure. Interesting physical variations were observed in these materials under the application of pressure. Exchange correlation effects are suitably selected for the structural and optoelectronic properties. The absorption edge appears to red shifted as the influence of pressure on the compounds rises (red shift). Materials demonstrates higher absorption under the strained geometry. These materials can find certain applications in the optoelectronic devices owning to their suitable energy bandgaps.