Cite
HARVARD Citation
Yang, J. et al. (2022). Reconfigurable Radio‐Frequency High‐Electron Mobility Transistors via Ferroelectric‐Based Gallium Nitride Heterostructure. Advanced Electronic Materials. p. n/a. [Online].
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Yang, J. et al. (2022). Reconfigurable Radio‐Frequency High‐Electron Mobility Transistors via Ferroelectric‐Based Gallium Nitride Heterostructure. Advanced Electronic Materials. p. n/a. [Online].