Cite
MLA Citation
Piotr Firek et al.. “Field effect transistor with thin AlOxNy film as gate dielectric.” Microelectronics international, vol. 37, no. 2, 2020, pp. 103–107. http://access.bl.uk/ark:/81055/vdc_100158559012.0x000036
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Piotr Firek et al.. “Field effect transistor with thin AlOxNy film as gate dielectric.” Microelectronics international, vol. 37, no. 2, 2020, pp. 103–107. http://access.bl.uk/ark:/81055/vdc_100158559012.0x000036