Cite
HARVARD Citation
Firek, P. et al. (2020). Field effect transistor with thin AlOxNy film as gate dielectric. Microelectronics international. 37 (2), pp. 103-107. [Online].
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Firek, P. et al. (2020). Field effect transistor with thin AlOxNy film as gate dielectric. Microelectronics international. 37 (2), pp. 103-107. [Online].