Cite
MLA Citation
Ousmane I Barry et al.. “Reduction of Residual Impurities in Homoepitaxial m‐Plane (101¯0) GaN by Using N2 Carrier Gas in Metalorganic Vapor Phase Epitaxy.” Physica status solidi, vol. 12, no. 8, 2018, p. n/a. http://access.bl.uk/ark:/81055/vdc_100066557857.0x000008