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HARVARD Citation
Barry, O. et al. (2018). Reduction of Residual Impurities in Homoepitaxial m‐Plane (101¯0) GaN by Using N2 Carrier Gas in Metalorganic Vapor Phase Epitaxy. Physica status solidi. 12 (8), p. n/a. [Online].
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Barry, O. et al. (2018). Reduction of Residual Impurities in Homoepitaxial m‐Plane (101¯0) GaN by Using N2 Carrier Gas in Metalorganic Vapor Phase Epitaxy. Physica status solidi. 12 (8), p. n/a. [Online].