Performance enhancement of solution-processed InZnO thin-film transistors by Al doping and surface passivation. (1st March 2022)

• Record Type: Journal Article
• Authors: Cai, Wensi; Li, Haiyun; Li, Mengchao; Zang, Zhigang
• Is Part Of: Journal of semiconductors. Volume 43:Number 3(2022)
• Publication Date: 2022-03-01
• Subjects: thin-film transistors -- oxide semiconductors -- Al doping -- surface passivation; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/43/3/034102
• Languages: English
• ISSNs: 1674-4926

Abstract

Abstract: Solution-processed oxide semiconductors have been considered as a potential alternative to vacuum-based ones in printable electronics. However, despite spin-coated InZnO (IZO) thin-film transistors (TFTs) have shown a relatively high mobility, the lack of carrier suppressor and the high sensitivity to oxygen and water molecules in ambient air make them potentially suffer issues of poor stability. In this work, Al is used as the third cation doping element to study the effects on the electrical, optoelectronic, and physical properties of IZO TFTs. A hydrophobic self-assembled monolayer called octadecyltrimethoxysilane is introduced as the surface passivation layer, aiming to reduce the effects from air and understand the importance of top surface conditions in solution-processed, ultra-thin oxide TFTs. Owing to the reduced trap states within the film and at the top surface enabled by the doping and passivation, the optimized TFTs show an increased current on/off ratio, a reduced drain current hysteresis, and a significantly enhanced bias stress stability, compared with the untreated ones. By combining with high-capacitance AlO x, TFTs with a low operating voltage of 1.5 V, a current on/off ratio of > 10 4 and a mobility of 4.6 cm 2 /(V·s) are demonstrated, suggesting the promising features for future low-cost, low-power electronics.