A novel optimum variation lateral doping SiC lateral double-diffused metal oxide semiconductor with improved performance. (1st October 2022)

• Record Type: Journal Article
• Authors: Kong, Moufu; Duan, Yuanmiao; Gao, Jiacheng; Yan, Ronghe; Zhang, Bingke; Yang, Hongqiang
• Is Part Of: Semiconductor science and technology. Volume 37:Number 10(2022)
• Publication Date: 2022-10-01
• Subjects: SiC LDMOS -- breakdown voltage -- gate-to-drain capacitance -- specific on-resistance -- safe operating area; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/ac88f0
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: In thsi paper a novel optimum variation lateral doping 4H-SiC lateral double-diffused metal oxide semiconductor (LDMOS) field-effect transistor with improved performance is proposed and numerically simulated. For the proposed 4H-SiC LDMOS, an optimized three-stage variation of lateral doping (VLD) p-top layer is employed in the drift region; thus the doping concentration of the n-drift region can be significantly increased, resulting an ultra-low specific resistance ( R on, sp ). The breakdown voltage (BV) is also improved, since the electric field distribution of the drift region is optimized. The current saturation characteristic, gate–drain capacitance ( C GD ) and gate-to-drain charge ( Q gd ) of the proposed device are all improved, thanks to the effect of the source-connected p-top region. Compared with a conventional LDMOS, the numerical simulation results show that the BV, R on, sp and Q gd of the proposed LDMOS are improved by more than 11.9%, 47.3% and 46.3%, respectively. The three-dimensional simulation result indicates that the entire three-stage p-top VLD layer can be produced by one-time fabrication process, which brings great convenience to future production.