Cite
MLA Citation
Ru Xu et al.. “High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing (Small 37/2022).” Small, vol. 18, no. 37, 2022, p. n/a. http://access.bl.uk/ark:/81055/vdc_100163730656.0x000023