Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration. (September 2019)

• Record Type: Journal Article
• Authors: Gao, Z.; Meneghini, M.; Rampazzo, F.; Rzin, M.; De Santi, C.; Meneghesso, G.; Zanoni, E.
• Is Part Of: Microelectronics and reliability. Volume 100/101(2019)
• Publication Date: 2019-09
• Subjects: Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2019.113489
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: The reliability of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration was investigated by means of different stress tests. Firstly, DC and pulsed I-V characterization at room temperature are discussed, then drain step stress tests at different gate voltages are compared, afterwards, the constant stress at different bias points are discussed. Results show that the high C HEMTs showed reduced DIBL, smaller leakage current, as well as decreased electric field, leading to an improved robustness during on-state stress testing, with respect to the reference ones. Failure modes during constant voltage stress consist in a decrease of drain current and transconductance, accelerated by temperature and electric field.