Stability and degradation of isolation and surface in Ga2O3 devices. (September 2019)

• Record Type: Journal Article
• Authors: De Santi, C.; Nardo, A.; Wong, M.H.; Goto, K.; Kuramata, A.; Yamakoshi, S.; Murakami, H.; Kumagai, Y.; Higashiwaki, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
• Is Part Of: Microelectronics and reliability. Volume 100/101(2019)
• Publication Date: 2019-09
• Subjects: Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2019.113453
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: Within this paper, we report the first study on the reliability of isolation structures and surfaces for the gallium oxide material system. Even though insulation by Mg-doping implantation and diffusion is found to provide a stable electrical isolation at increasing temperature, a significant thermally-activated leakage flows through surface states. The vertical bulk material does provide a better stability of the isolation over stress time, but withstands a lower level of stress compared with the surface and the lateral structure, possibly due to the charge trapping at the surface of the latter that mitigates the peak electric field. Highlights: Insulation by Mg-doping of Ga2 O3 is stable at increasing temperature A significant thermally-activated leakage flows through surface states The vertical device has a good stability of the isolation over stress time The vertical device withstands a lower stress voltage compared with the lateral one