S-band pulsed-RF operating life test on AlGaN/GaN HEMT devices for radar application. (September 2019)

• Record Type: Journal Article
• Authors: Moultif, N.; Latry, O.; Ndiaye, M.; Neveu, T.; Joubert, E.; Moreau, C.; Goupy, J-F.
• Is Part Of: Microelectronics and reliability. Volume 100/101(2019)
• Publication Date: 2019-09
• Subjects: Aging -- AlGaN/GaN HEMT -- Pulsed-RF operating life test -- Reliability -- Traps; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2019.113434
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: Reliability studies are fundamental to optimize the use of new emerging technologies such as AlGaN/GaN HEMTs. This paper reports a reliability study on two power amplifiers using AlGaN/GaN HEMT in real operating conditions for radar applications. Three pulsed-RF long aging tests (8000 h/11, 000 h total) are performed under different conditions of ( V ds ), Temperature, gain compression and Duty cycle. A following of various degradation indicators during the aging tests is presented ( P out, I ds, I gs, R ds ( on ), G m and V th ). This study will contribute to establish a new reliability prediction model of GaN devices and update the FIDES guide. Highlights: This paper reports a reliability study on two power amplifiers using AlGaN/GaN HEMT in real radar operating conditions. This paper presents the main results of three pulsed-RF long ageing tests (8000h/11000h total). A following of various degradation indicators during the ageing tests is presented (Pout, Ids, Igs, Rds(on), Gm and Vth). This study will contribute to establish a new reliability prediction model of GaN devices and update the FIDES guide.