Cite
HARVARD Citation
Ivantsov, V. et al. (2012). A Comparative Study of Dislocations in HVPE GaN Layers by High-Resolution X-Ray Diffraction and Selective Wet Etching. ISRN condensed matter physics. p. . [Online].
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Ivantsov, V. et al. (2012). A Comparative Study of Dislocations in HVPE GaN Layers by High-Resolution X-Ray Diffraction and Selective Wet Etching. ISRN condensed matter physics. p. . [Online].