A Comparative Study of Dislocations in HVPE GaN Layers by High-Resolution X-Ray Diffraction and Selective Wet Etching. (30th August 2012)

• Record Type: Journal Article
• Authors: Ivantsov, Vladimir; Volkova, Anna
• Other Names: Oyamada A. Academic Editor.; Phan M.-H. Academic Editor.; Yang H.-D. Academic Editor.
• Is Part Of: ISRN condensed matter physics. Volume 2012(2012)
• Publication Date: 2012-08-30
• Subjects: Condensed matter -- Periodicals; Condensed matter; Periodicals; Electronic journals; 530.41
• DOI: 10.5402/2012/184023
• Languages: English
• ISSNs: 2090-7397

Abstract

Abstract : It has been shown during the present study that the E-etching at elevated temperatures can be adopted for the dislocation etching in hydride vapor-phase epitaxy (HVPE) GaN layers. It has been found that the X-ray diffraction (XRD) evaluation of the dislocation density in the thicker than 6 μ m epilayers using conventional Williamson-Hall plots and Dunn-Koch equation is in an excellent agreement with the results of the elevated-temperature E-etching. The dislocation distribution measured for 2-inch GaN-on-sapphire substrate suggests strongly the influence of the inelastic thermal stresses on the formation of the final dislocation pattern in the epilayer.