Recent progress of physical failure analysis of GaN HEMTs. (May 2021)

• Record Type: Journal Article
• Authors: Cai, Xiaolong; Du, Chenglin; Sun, Zixuan; Ye, Ran; Liu, Haijun; Zhang, Yu; Duan, Xiangyang; Lu, Hai
• Is Part Of: Journal of semiconductors. Volume 42:Number 5(2021)
• Publication Date: 2021-05
• Subjects: GaN -- high electron mobility transistors -- physical analysis -- failure mechanism; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/42/5/051801
• Languages: English
• ISSNs: 1674-4926

Abstract

Abstract: Gallium nitride (GaN)-based high-electron mobility transistors (HEMTs) are widely used in high power and high frequency application fields, due to the outstanding physical and chemical properties of the GaN material. However, GaN HEMTs suffer from degradations and even failures during practical applications, making physical analyses of post-failure devices extremely significant for reliability improvements and further device optimizations. In this paper, common physical characterization techniques for post failure analyses are introduced, several failure mechanisms and corresponding failure phenomena are reviewed and summarized, and finally device optimization methods are discussed.