Low Hydrogen Silicon Carbon Nitride Cap for High Performance Sub-10 nm Cu-Low k Interconnect. (1st January 2017)

• Record Type: Journal Article
• Authors: Van Nguyen, Son; Hosadugra, Shobha; Haigh, T.; Yao, Y.; Tai, L.; Cohen, S.; Shaw, T.; Hu, C. K.; Liniger, E.; Virwani, K.; Kellock, A. J.; Canaperi, D.
• Is Part Of: ECS journal of solid state science and technology. Volume 6:Number 7(2017)
• Page Start: P429
• Page End: P434
• Publication Date: 2017-01-01
• Subjects: Cu diffusion barrier -- Cu-Low k interconnect -- Electromigration -- Low Hydrogen Cu Cap -- nano device material -- Oxidation barrier -- Plasma CVD dielectric -- SiCN -- TDDB; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0231707jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : As integrated circuits for high performance CMOS devices scale down to ≤ 10 nm dimension, further reductions in cap thickness to reduce capacitance are required for the Cu barrier while maintaining sufficient mechanical strength, low leakage, high dielectric breakdown, and fabrication integration robustness. This paper presents the development of a second generation robust low- hydrogen SiCN films to enable cap thickness reduction to ≤ 10 nm by simply altering/reducing the hydrogen concentration in the SiCN film. This is achieved by the simple addition of hydrogen precursor in the plasma deposition chemistry.