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APA Citation
Chen, S., Chang, S., Chang, S., Hsieh, W., & Lin, C. (2018). highly Stable Ultrathin TiO2 Based Resistive Random Access Memory with Low Operation Voltage. ECS journal of solid state science and technology, 7, Q3183–Q3188. http://access.bl.uk/ark:/81055/vdc_100160136800.0x00000d