Cite
HARVARD Citation
Chen, S. et al. (2018). Highly Stable Ultrathin TiO2 Based Resistive Random Access Memory with Low Operation Voltage. ECS journal of solid state science and technology. pp. Q3183-Q3188. [Online].
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Chen, S. et al. (2018). Highly Stable Ultrathin TiO2 Based Resistive Random Access Memory with Low Operation Voltage. ECS journal of solid state science and technology. pp. Q3183-Q3188. [Online].