Cite
MLA Citation
Shih-Wei Feng et al.. “Precursor Duration and Thermal Annealing Effects in InGaN/GaN Multiple Quantum Wells Grown on Nitrogen-Polar GaN Templates by a Pulsed Metallorganic Chemical Vapor Deposition.” ECS journal of solid state science and technology, vol. 7, 2018, pp. R161–R165. http://access.bl.uk/ark:/81055/vdc_100160136565.0x000004