Impact of Rapid Thermal Oxidation at Ultrahigh-Temperatures on Oxygen Precipitation Behavior in Czochralski-Silicon Crystals III. (1st January 2015)

• Record Type: Journal Article
• Authors: Araki, Koji; Sudo, Haruo; Maeda, Susumu
• Is Part Of: ECS Solid State Letters. Volume 4:Number 9(2015)
• Page Start: P63
• Page End: P65
• Publication Date: 2015-01-01
• Subjects: Interstitial Silicon -- Oxygen precipitate -- Point defect -- Rapid thermal oxidation -- Semiconductor -- Silicon -- ultrahigh-temperature -- Vacancy -- Void defect
• DOI: 10.1149/2.0071508ssl
• Languages: English
• ISSNs: 2162-8750

Abstract

Abstract : This paper describes the annihilation behavior of void defects in Czochralski silicon wafers during ultrahigh-temperature rapid thermal oxidation (RTO) at temperatures over 1300°C. Our results clearly demonstrate that ultrahigh-temperature RTO can provide not only the control of oxygen precipitation nuclei, but also annihilation of void defects. It is estimated from point defect calculations that the Ci/Ci eq ratio still remains supersaturated because of the oxidation of the Si surface even though the type of the dominant point defect changes from interstitial Si to vacancies during ultrahigh-temperature RTO.