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APA Citation
El Kazzi, S., Alireza, A., Bordallo, C. C. M., Smets, Q., Desplanque, L., Wallart, X., Richard, O., Douhard, B., Verhulst, A., Collaert, N., Merckling, C., Heyns, M., & Thean, A. (2016). influence of Doping and Tunneling Interface Stoichiometry on n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki Diode Behavior. ECS transactions, 72, 73–80. http://access.bl.uk/ark:/81055/vdc_100117134347.0x00001c