Cite
HARVARD Citation
El Kazzi, S. et al. (2016). Influence of Doping and Tunneling Interface Stoichiometry on n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki Diode Behavior. ECS transactions. pp. 73-80. [Online].
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El Kazzi, S. et al. (2016). Influence of Doping and Tunneling Interface Stoichiometry on n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki Diode Behavior. ECS transactions. pp. 73-80. [Online].