Cite
HARVARD Citation
Lei, Y. et al. (2022). A simulation-based evaluation of single-event burnout mechanisms and varied SEB hardening designs in power LDMOS transistors. Microelectronics and reliability. p. . [Online].
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Lei, Y. et al. (2022). A simulation-based evaluation of single-event burnout mechanisms and varied SEB hardening designs in power LDMOS transistors. Microelectronics and reliability. p. . [Online].