Review of titanium trisulfide (TiS3): A novel material for next generation electronic and optical devices. (1st June 2021)

• Record Type: Journal Article
• Authors: Tripathi, Nishant; Pavelyev, Vladimir; Sharma, Prachi; Kumar, Sunil; Rymzhina, Anastasiia; Mishra, Prabhash
• Is Part Of: Materials science in semiconductor processing. Volume 127(2021)
• Publication Date: 2021-06-01
• Subjects: TiS3 nanostructures -- Fabrication -- Electronic and optoelectronic transport coefficients -- Vibrational modes -- Photodetectors -- Mode-locked lasers -- FETs -- p-n junction; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2021.105699
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Titanium trisulfide(TiS3 ) is a newly emerging material of the transition-metal tri-chalcogenides(TMTCs) family. It has non-linear optical property and conductivity. In addition, the highly anisotropic electronic and thermal properties of TiS3 offer a new platform to the worldwide researchers to develop future electronics and optoelectronics devices. While bulk TiS3 has indirect bandgap, mono- and few-layered TiS3 is n-type semiconductor with a direct bandgap of 1.0 ± 0.1eV. This article deals with the controlled synthesis of TiS3 along with the analysis of their basic construction and electronic band structure. The manipulation of band structure by external forces, such as strain, temperature, etc., and the variation in electronic and optoelectronic properties of TiS3 with respect to band structure manipulation has also been investigated. The various vibrational modes involved in TiS3 ; the origin of vibrational modes and the effects of temperature, pressure and angle of polarized light on vibrational modes were analysed in detail. We review both experimental data as well as theoretical data about the thermal and electronics transport coefficients, thermoelectric property and the temperature induced charge density waves relative to TiS3 . Finally, the electronic and optoelectronic applications of TiS3, such as FETs, p-n junction, linear and polarized-light photodetectors and mode-locked-lasers have been discussed.