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HARVARD Citation
Thakur, A. et al. (2022). A physics-based drain current model for Si1-xGex source/drain NT JLFET for enhanced hot carrier reliability with temperature measurement. Microelectronics journal. p. . [Online].
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Thakur, A. et al. (2022). A physics-based drain current model for Si1-xGex source/drain NT JLFET for enhanced hot carrier reliability with temperature measurement. Microelectronics journal. p. . [Online].