New accurate approximation of the Einstein Relation for heavily-doped semiconductor devices. (October 2020)

• Record Type: Journal Article
• Authors: AlQurashi, Ahmed; Selvakumar, C.R.
• Is Part Of: Solid-state electronics. Volume 172(2020)
• Publication Date: 2020-10
• Subjects: Einstein's relation -- Fermi-Dirac Integrals -- Degeneracy -- Prony's method; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2020.107869
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: This paper presents a new set of approximations of the Einstein Relation. The present approximation is a closed-form expression for the doping-dependent Einstein Relation. The proposed approximation is valid for the degenerate semiconductor devices. The approximation can be applied in the Nano electronic devices. The paper shows high accuracy between the approximated and actual values of Einstein Relation. Abstract: The modern electronic devices have been scaled down significantly. The scaling rules would dictate higher doping concentrations which lead us to consider the degeneracy in the calculations. One of the semiconductor device quantities that would be impacted by considering the degeneracy is the Einstein Relation. The commonly used formula of Einstein Relation assumes that it is constant and independent of doping. The doping-independent Einstein Relation would cause serious inaccuracy in the calculations. This paper offers a closed-form solution for doping-dependent Einstein Relation. The proposed expression employs approximations of Fermi-Dirac Integrals (FDI) needed in the Einstein Relation. The quality and accuracy of the proposed approximations have been determined.