Cite
HARVARD Citation
Pfusterschmied, G. et al. (2021). Impact of Ar+ bombardment of 4H–SiC substrates on Schottky diode barrier heights. Materials science in semiconductor processing. p. . [Online].
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Pfusterschmied, G. et al. (2021). Impact of Ar+ bombardment of 4H–SiC substrates on Schottky diode barrier heights. Materials science in semiconductor processing. p. . [Online].