Cite
HARVARD Citation
Chen, J. et al. (2022). Polycrystalline-silicon-based double-gate ion-sensitive field-effect transistors using APTES/SiO2 stack-sensing membrane. Japanese journal of applied physics. p. . [Online].
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Chen, J. et al. (2022). Polycrystalline-silicon-based double-gate ion-sensitive field-effect transistors using APTES/SiO2 stack-sensing membrane. Japanese journal of applied physics. p. . [Online].