Polycrystalline-silicon-based double-gate ion-sensitive field-effect transistors using APTES/SiO2 stack-sensing membrane. (1st June 2022)

• Record Type: Journal Article
• Authors: Chen, Jun-Rong; Chen, Henry J. H.; Tseng, Shin-Lun
• Is Part Of: Japanese journal of applied physics. Volume 61:Number SD(2022)
• Publication Date: 2022-06-01
• Subjects: poly-Si -- ISFETs -- double-gate -- APTES; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/ac5422
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: This study demonstrated a polycrystalline-silicon (poly-Si)-based double-gate (DG) ion-sensitive field-effect transistors (DG-ISFETs) using APTES/SiO2 stack-sensing membrane. The APTES/SiO2 stack-sensing membrane enhanced the single-gate (SG) sensitivity, and suppressed the hysteresis. The DG structure was preferred to have a capacitive coupling effect and to amplify the sensitivity of ISFETs. The sensitivities of SG- and DG-ISFETs were approximately 56.8 and 294 mV pH −1, respectively. In addition, the corresponding amplifying factor was approximately 5.2. With this approach, the poly-Si DG-ISFETs can be a candidate for future high-performance biochemical sensing applications.