Cite
HARVARD Citation
Daigo, Y. et al. (2022). Influence of residual dopants to net doping concentration in N-type 4H-SiC films grown using high-speed wafer rotation vertical CVD method. Japanese journal of applied physics. p. . [Online].
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Daigo, Y. et al. (2022). Influence of residual dopants to net doping concentration in N-type 4H-SiC films grown using high-speed wafer rotation vertical CVD method. Japanese journal of applied physics. p. . [Online].