Zn2SnO4 Thin Film for Ozone Gas Sensor Developed on MEMS Device and Synthesized by HiPIMS Co-sputtering. (1st June 2022)

• Record Type: Journal Article
• Authors: Chou, Cheng-Hsueh; Hsiao, Yu-Jen; Wang, Sheng-Chang
• Is Part Of: ECS journal of solid state science and technology. Volume 11:Number 6(2022)
• Publication Date: 2022-06-01
• Subjects: Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2162-8777/ac7ad3
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : The sensing film of Zn2 SnO4 is developed and synthesized by High Power Impulse Magnetron Sputtering (HiPIMS) co-sputtering system which is integrated on the Microelectromechanical Systems (MEMS) gas sensor. The experimental results revealed that the optimal annealing temperature is at 600 °C and optimal operating temperature is at 100 °C which has the best sensing performance for Ozone sensing. It is found that 0.3 ppm of O3 gas concentration gas the response value (Ra /Rg ) 39.03 and at 0.05 ppm of low concentration, the sensing response recorded to be 8.03. In the selectivity test, with 5 other gases like CO, NO2, C3 H4 O3, C2 H5 OH and H2 S, sensor exhibited high selectivity for O3 gas. The Zn2 SnO4 sensing film have quickly responded to O3 gas with 6 s response time and the 18 s recovery time. In the current study, the Zn2 SnO4 film in MEMS gas sensor shown good detection performance at low gas concentrations and has potential applications in environmental sensing.