27‐1: Fabrication Method for Miniaturized CAAC‐OS FET for High‐Definition AR/VR Displays. Issue 1 (28th June 2022)

• Record Type: Journal Article
• Authors: Hodo, Ryota; Saito, Satoru; Sugaya, Kentaro; Hiura, Yoshikazu; Fujie, Takahiro; Sasagawa, Shinya; Murakawa, Tsutomu; Kunitake, Hitoshi; Yamazaki, Shunpei
• Is Part Of: Digest of technical papers. Volume 53:Issue 1(2022)
• Page Start: 310
• Page End: 313
• Publication Date: 2022-06-28
• Subjects: Oxide semiconductor -- IGZO etching -- High-definition -- Display -- VR -- AR; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.15482
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : An island formation method for fabrication of a miniaturized CAAC‐OS FET has been developed. With our etching process, the CAAC‐OS FET, which has a gate length as small as 6.5 nm, had a high on‐off drain current ratio. The high‐definition display had excellent characteristics of a low lateral leakage current.