Cite
MLA Citation
Ngo Thi Huong et al.. “Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors.” Semiconductor science and technology, vol. 36, 2021, p. . http://access.bl.uk/ark:/81055/vdc_100121064996.0x00005f