Crystal orientation dependence of metal–insulator transition for VO2 microwires fabricated on TiO2(110) substrates with step and terrace structures. (1st April 2022)

• Record Type: Journal Article
• Authors: Kim, Kyungmin; Genchi, Shingo; Yamazaki, Shiro; Tanaka, Hidekazu; Abe, Masayuki
• Is Part Of: Applied physics express. Volume 15:Number 4(2022)
• Publication Date: 2022-04-01
• Subjects: thin films -- vanadium dioxide -- metal–insulator transition -- step and terrace structures -- strain engineering; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/ac5c95
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: Vanadium dioxide (VO2 ) thin films exhibit a metal–insulator transition (MIT) with sensitivity to the lattice strain. Substrates with step and terrace structures are an attractive platform for growing high-quality thin films. Thus, a prominent lattice strain effect could be derived using VO2 thin films on these substrates. In this study, VO2 /TiO2 microwires were fabricated following the thin film growth to investigate the microwire-direction dependence of the MIT property. The in-plane crystal orientation dependence of the MIT property was enhanced for VO2 /TiO2 microwires with step and terrace structures, which is promising for strain engineering in device applications.