Crystal orientation dependence of metal–insulator transition for VO2 microwires fabricated on TiO2(110) substrates with step and terrace structures. (1st April 2022) - Kim, Kyungmin
Abstract: Vanadium dioxide (VO2 ) thin films exhibit a metal–insulator transition (MIT) with sensitivity to the lattice strain. Substrates with step and terrace structures are an attractive platform for growing high-quality thin films. Thus, a prominent lattice strain effect could be derived using VO2 thin films on these substrates. In this study, VO2 /TiO2 microwires were fabricated following the thin film growth to investigate the microwire-direction dependence of the MIT property. The in-plane crystal orientation dependence of the MIT property was enhanced for VO2 /TiO2 microwires with step and terrace structures, which is promising for strain engineering in device applications.