High optical gain in InP-based quantum-dot material monolithically grown on silicon emitting at telecom wavelengths. (1st May 2022)

• Record Type: Journal Article
• Authors: Balasubramanian, Ramasubramanian; Sichkovskyi, Vitalii; Corley-Wiciak, Cedric; Schnabel, Florian; Popilevsky, Larisa; Atiya, Galit; Khanonkin, Igor; Willinger, Amnon J; Eyal, Ori; Eisenstein, Gadi; Reithmaier, Johann Peter
• Is Part Of: Semiconductor science and technology. Volume 37:Number 5(2022)
• Publication Date: 2022-05-01
• Subjects: InP based QD laser on Si -- dislocation filtering layers -- GaAs on Si -- InAs QD SOA; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/ac5d10
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: We describe the fabrication process and properties of an InP based quantum dot (QD) laser structure grown on a 5° off-cut silicon substrate. Several layers of QD-based dislocation filters embedded in GaAs and InP were used to minimize the defect density in the QD active region which comprised eight emitting dot layers. The structure was analyzed using high resolution transmission electron microscopy, atomic force microscopy and photoluminescence. The epitaxial stack was used to fabricate optical amplifiers which exhibit electroluminescence spectra that are typical of conventional InAs QD amplifiers grown on InP substrates. The amplifiers avail up to 20 dB of optical gain, which is equivalent to a modal gain of 46 cm −1 .