Effect of noise components on L-shaped and T-shaped heterojunction tunnel field effect transistors. (1st July 2022)

• Record Type: Journal Article
• Authors: Chander, Sweta; Sinha, Sanjeet Kumar; Chaudhary, Rekha; Goswami, Rupam
• Is Part Of: Semiconductor science and technology. Volume 37:Number 7(2022)
• Publication Date: 2022-07-01
• Subjects: noise -- heterojunction -- TFET -- tunnelling -- BTBT (band-to-band tunnelling); Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/ac696e
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: This paper reports on a comparative study of the analysis of electrical noise of heterojunction tunnelling-field-effect-transistors with an L-shaped gate (LTFET) and with a T-shaped gate (TTFET) using numerical simulations. The effect of different noise components on both structures were investigated at low frequency and high frequency to check the viability of the proposed devices. The two source regions are used in TTFET to increase the tunnelling area that enhances the ON-current. Also, we studied the effect of introducing Gaussian traps onto the interface of the source-gate oxide and channel-gate oxide on different noise components and net noise. TTFET outperforms LTFET in terms of electrical parameters and noise spectral densities, thereby offering a solution to the trade-off between high tunnelling rates and noise spectral densities in TFETs. The proposed LTFET and TTFETs are free from ambipolarity issues and can further be deployed in low power applications.