Improvement of thermal resistance in InGaAs/GaAs/AlGaAs microdisk lasers bonded onto silicon. (1st July 2022)

• Record Type: Journal Article
• Authors: Zubov, F I; Moiseev, E I; Nadtochiy, A M; Fominykh, N A; Ivanov, K A; Makhov, I S; Dragunova, A S; Maximov, M V; Vorobyev, A A; Mozharov, A M; Mintairov, S A; Kalyuzhnyy, N A; Gordeev, N Yu; Kryzhanovskaya, N V; Zhukov, A E
• Is Part Of: Semiconductor science and technology. Volume 37:Number 7(2022)
• Publication Date: 2022-07-01
• Subjects: diode lasers -- microdisks -- thermal resistance; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/ac7071
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: Epi-side down bonding on a silicon substrate of AlGaAs/GaAs microdisk lasers is presented. A heterostructure with coupled large optical cavities enables location of an InGaAs quantum dot active region at a distance of ∼1 µ m from the heterostructure surface. The thermal resistance was reduced to 0.2 and 0.1 K mW −1 for disks of 30 and 50 µ m in diameter, respectively. The maximum continuous-wave power limited by the thermal rollover is more than doubled after bonding.