A comprehensive review on recent advancements in d0 ferromagnetic oxide materials. (15th August 2022)

• Record Type: Journal Article
• Authors: Chouhan, L.; Srivastava, S.K.
• Is Part Of: Materials science in semiconductor processing. Volume 147(2022)
• Publication Date: 2022-08-15
• Subjects: Spintronics -- d0 ferromagnetism -- Oxides -- SnO2 -- TiO2 -- ZrO2 -- ZnO -- MgO -- Non-magnetic elements doping -- Ab-initio calculation -- Density functional theory (DFT); Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2022.106768
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: d 0 ferromagnetic oxide semiconductors have recently been proposed as a potential and alternative material with high Curie temperature ferromagnetism, which is important to realize spintronics devices operable at room temperature. We review the recent development in non-magnetic elements doped d 0 ferromagnetic oxide semiconductors, including SnO2, TiO2, ZnO, ZrO2 and MgO. The experimental and theoretical results from recent literature on these atypical d 0 ferromagnetic materials are discussed, with a particular focus on their magnetic properties.