Bonding strength enhancement of low temperature sintered SiC power module by femtosecond laser induced micro/nanostructures. (September 2022)

• Record Type: Journal Article
• Authors: Cao, Peilin; Wang, Cong; Lin, Nai; Li, Shaohui; Zhang, Xiaofeng; Duan, Ji'an
• Is Part Of: Materials science in semiconductor processing. Volume 148(2022)
• Publication Date: 2022-09
• Subjects: SiC chip -- Micro/nanostructures -- Femtosecond laser -- Low-temperature sintering -- Finite element simulation; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2022.106802
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: In this work, a low-temperature and low-pressure method was proposed for the bonding strength enhancement of SiC chips and substrates using micro/nanostructures fabricated by femtosecond laser. It is demonstrated that a reliable bond was achieved at 180 °C without assistant pressure. When the sintering temperature reached 250 °C and the assistant pressure was 10 MPa, the average shear strength reached 45 MPa, which was more than 3 times that of the flat substrate. The fracture surface morphology and the cross-section of the sample were characterized by SEM to analyze the enhancement mechanism of shear strength. The shear strength under different sintering conditions was also discussed. The thermomechanical coupled finite element simulation results demonstrate that the power module possessed excellent thermal capability and reliable lifetime under a temperature shock environment (−50 °C–250 °C). It is proved that the measured temperature distribution of the joint is in agreement with the simulation results. This method has great application prospects in microelectronic packaging, especially for wide-bandgap power semiconductors.