The research of dual-mode film bulk acoustic resonator for enhancing temperature sensitivity. (6th January 2021)

• Record Type: Journal Article
• Authors: Zhao, Jiahao; Xing, Yanhui; Han, Jun; Lin, Wenkui; Yun, Xiaofan; Sun, Yuhua; Zhou, Xin; Wang, Zheming; Cao, Xu; Zhang, Baoshun; Wang, Yiqun
• Is Part Of: Semiconductor science and technology. Volume 36:Number 2(2021)
• Publication Date: 2021-01-06
• Subjects: film bulk acoustic resonator -- dual-mode -- AlN -- temperature sensor; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/abd15c
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: A dual-mode film bulk acoustic resonator (DM-FBAR) temperature sensor modulated by different phosphorous-doped silica insertion layers was reported in this paper. The relative drift of the second and third resonance peaks of FBAR could improve the temperature sensitivity through the dual-mode beat frequency calculation method. The temperature sensitivity can be regulated by different the PH3 doping flow in the SiO2 insertion layer. Among the fabricated devices, FBAR with a SiO2 insertion layer doped 4 sccm PH3 has the highest temperature sensitivity of 64.8 kHz °C −1 . It is discovered that the greater the Young's modulus of the insert film changes with temperature, the higher the temperature sensitivity of DM-FBAR device. Therefore, an important technical means to improve the performance of DM-FBAR devices is using the material whose Young's modulus is more sensitive to temperature in the future.